All MOSFET. TMD2N60AZ Datasheet

 

TMD2N60AZ Datasheet and Replacement


   Type Designator: TMD2N60AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: DPAK
 

 TMD2N60AZ substitution

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TMD2N60AZ Datasheet (PDF)

 ..1. Size:455K  trinnotech
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TMD2N60AZ

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 7.1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf pdf_icon

TMD2N60AZ

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 7.2. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMD2N60AZ

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info

 8.1. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf pdf_icon

TMD2N60AZ

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

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Datasheet: TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , TMD18N20Z , TMD2N40 , 20N60 , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z , TMD3N80G , TMD3N90 , TMD4N60 .

Keywords - TMD2N60AZ MOSFET datasheet

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