TMD2N60Z Specs and Replacement
Type Designator: TMD2N60Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: DPAK
TMD2N60Z substitution
- MOSFET ⓘ Cross-Reference Search
TMD2N60Z datasheet
tmd2n60z tmu2n60z.pdf
TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒
tmd2n60az tmu2n60az.pdf
TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒
tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf
TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info... See More ⇒
tmd2n65az tmu2n65az.pdf
TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒
Detailed specifications: TMAN7N90, TMAN8N80, TMAN9N90, TMAN9N90AZ, TMD16N25Z, TMD18N20Z, TMD2N40, TMD2N60AZ, IRF540N, TMD2N65AZ, TMD3N40ZG, TMD3N50AZ, TMD3N50Z, TMD3N80G, TMD3N90, TMD4N60, TMD4N60AZ
Keywords - TMD2N60Z MOSFET specs
TMD2N60Z cross reference
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