TMD4N65Z Datasheet and Replacement
Type Designator: TMD4N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-220
TMD4N65Z substitution
TMD4N65Z Datasheet (PDF)
tmd4n65z tmu4n65z.pdf
TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
tmd4n65az tmu4n65az.pdf
TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
tmd4n60 tmu4n60.pdf
TMD4N60/TMU4N60TMD4N60G/TMU4N60GVDSS = 660 V @TjmaxFeaturesID = 4A Low gate chargeRDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHSTMD4N60G/TMU4N60G D-PAK/I-PAK
tmd4n60az tmu4n60az.pdf
TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
Datasheet: TMD3N40ZG , TMD3N50AZ , TMD3N50Z , TMD3N80G , TMD3N90 , TMD4N60 , TMD4N60AZ , TMD4N65AZ , IRFP260N , TMD5N40ZG , TMD5N50 , TMD5N50G , TMD5N60AZ , TMD5N60Z , AOD434 , TMD630Z , TMD6N65G .
History: 2SK3504 | SVTP209R7NP7 | AP2R803GS-HF | AP3801GM-HF | SK840320
Keywords - TMD4N65Z MOSFET datasheet
TMD4N65Z cross reference
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TMD4N65Z replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK3504 | SVTP209R7NP7 | AP2R803GS-HF | AP3801GM-HF | SK840320
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