All MOSFET. TMD5N60AZ Datasheet

 

TMD5N60AZ MOSFET. Datasheet pdf. Equivalent

Type Designator: TMD5N60AZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 98.4 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 72 pF

Maximum Drain-Source On-State Resistance (Rds): 2.1 Ohm

Package: DPAK

TMD5N60AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMD5N60AZ Datasheet (PDF)

1.1. tmd5n60az.pdf Size:457K _upd-mosfet

TMD5N60AZ
TMD5N60AZ

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS TMD5N

3.1. tmd5n60z.pdf Size:461K _upd-mosfet

TMD5N60AZ
TMD5N60AZ

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5

 5.1. tmd5n50.pdf Size:345K _upd-mosfet

TMD5N60AZ
TMD5N60AZ

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

5.2. tmd5n40zg.pdf Size:617K _upd-mosfet

TMD5N60AZ
TMD5N60AZ

TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 3.4A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso

 5.3. tmd5n50g.pdf Size:345K _upd-mosfet

TMD5N60AZ
TMD5N60AZ

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

Datasheet: TMD3N90 , TMD4N60 , TMD4N60AZ , TMD4N65AZ , TMD4N65Z , TMD5N40ZG , TMD5N50 , TMD5N50G , RFP50N06 , TMD5N60Z , AOD434 , TMD630Z , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z .

Back to Top

 


TMD5N60AZ
  TMD5N60AZ
  TMD5N60AZ
 

social 

LIST

Last Update

MOSFET: SIHF22N60S | SIHF22N60E | SIHF18N50D | SIHF18N50C | SIHF16N50C | SIHF15N65E | SIHF15N60E | SIHF12N65E | SIHF12N60E | SIHF12N50C | SIHF10N40D | SIHD7N60E | SIHD6N65E | SIHD6N62E | SIHD5N50D |

 

 

Back to Top