AOD434 MOSFET Datasheet: N-Ch, 20V, 18A. Full specification with pinout and replacement list

AOD434 Specs and Replacement

Type Designator: AOD434

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 232 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DPAK

AOD434 substitution

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AOD434 datasheet

..1. Size:110K aosemi
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AOD434 N-Channel Enhancement Mode Field Effect Transistor General Description Features VDS (V) = 20V The AOD434 uses advanced trench technology to ID = 18A (VGS = 10V) provide excellent RDS(ON), low gate charge and RDS(ON) ... See More ⇒

9.1. Size:141K aosemi
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www.DataSheet4U.com AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 60A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) ... See More ⇒

9.2. Size:838K cn vbsemi
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AOD438 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLU... See More ⇒

Detailed specifications: TMD4N60AZ, TMD4N65AZ, TMD4N65Z, TMD5N40ZG, TMD5N50, TMD5N50G, TMD5N60AZ, TMD5N60Z, IRFB4115, TMD630Z, TMD6N65G, TMD6N70, TMD7N60Z, TMD7N65AZ, TMD7N65Z, TMD830, TMD830AZ