All MOSFET. TMP10N60 Datasheet

 

TMP10N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: TMP10N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 198 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 36 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO-220

TMP10N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMP10N60 Datasheet (PDF)

0.1. tmp10n60a tmpf10n60a.pdf Size:609K _trinnotech

TMP10N60
TMP10N60

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 10A <0.7W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N60A / TMPF10N60A TO-220 / TO-220F TMP10N60A / TMPF10N60A RoHS TMP10N60AG / TMPF10N60AG TO-220

0.2. tmp10n60 tmpf10n60.pdf Size:335K _trinnotech

TMP10N60
TMP10N60

TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax Features ID = 10A  Low gate charge RDS(on) = 0.75 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHS TMP10N60G / TMPF10N60G

 7.1. tmp10n65 tmpf10n65.pdf Size:577K _trinnotech

TMP10N60
TMP10N60

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A  Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

7.2. tmp10n65a tmpf10n65a.pdf Size:607K _trinnotech

TMP10N60
TMP10N60

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 650V 9.5A <0.82W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65A / TMPF10N65A TO-220 / TO-220F TMP10N65A / TMPF10N65A RoHS TMP10N65AG / TMPF10N65AG TO-22

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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