TMP16N60 Datasheet and Replacement
Type Designator: TMP16N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 53 nC
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 256 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO-220
TMP16N60 substitution
TMP16N60 Datasheet (PDF)
tmp16n60 tmpf16n60.pdf

TMP16N60/TMPF16N60TMP16N60G/TMPF16N60GVDSS = 660 V @TjmaxFeaturesID = 16A Low gate chargeRDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHSTMP16N60G / TMPF16N60G
tmp16n60a tmpf16n60a.pdf

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A
tmp16n25z tmpf16n25z.pdf

TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A
tmp160n10a.pdf

TMP160N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter
Datasheet: TMP10N80 , TMP11N50 , TMP11N50SG , TMP12N60 , TMP12N60A , TMP13N50 , TMP15N50 , TMP16N25Z , 4N60 , TMP16N60A , TMP18N20Z , TMP20N50 , TMP20N50A , TMP2N60AZ , TMP2N60Z , TMP2N65AZ , TMP3N50AZ .
Keywords - TMP16N60 MOSFET datasheet
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