All MOSFET. TMP16N60A Datasheet

 

TMP16N60A Datasheet and Replacement


   Type Designator: TMP16N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 262 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-220
 

 TMP16N60A substitution

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TMP16N60A Datasheet (PDF)

 ..1. Size:618K  trinnotech
 tmp16n60a tmpf16n60a.pdf pdf_icon

TMP16N60A

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 6.1. Size:341K  trinnotech
 tmp16n60 tmpf16n60.pdf pdf_icon

TMP16N60A

TMP16N60/TMPF16N60TMP16N60G/TMPF16N60GVDSS = 660 V @TjmaxFeaturesID = 16A Low gate chargeRDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHSTMP16N60G / TMPF16N60G

 8.1. Size:625K  trinnotech
 tmp16n25z tmpf16n25z.pdf pdf_icon

TMP16N60A

TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A

 9.1. Size:445K  cn wuxi unigroup
 tmp160n10a.pdf pdf_icon

TMP16N60A

TMP160N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter

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Datasheet: TMP11N50 , TMP11N50SG , TMP12N60 , TMP12N60A , TMP13N50 , TMP15N50 , TMP16N25Z , TMP16N60 , IRF1010E , TMP18N20Z , TMP20N50 , TMP20N50A , TMP2N60AZ , TMP2N60Z , TMP2N65AZ , TMP3N50AZ , TMP3N50Z .

Keywords - TMP16N60A MOSFET datasheet

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