TMP5N60Z Datasheet and Replacement
Type Designator: TMP5N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 69 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-220
TMP5N60Z substitution
TMP5N60Z Datasheet (PDF)
tmp5n60z tmpf5n60z.pdf

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A
tmp5n60az tmpf5n60az.pdf

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
tmp5n50sg tmpf5n50sg.pdf

TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs
tmp5n50 tmpf5n50.pdf

TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST
Datasheet: TMP4N65 , TMP4N65AZ , TMP4N65Z , TMP4N80 , TMP4N90 , TMP5N50 , TMP5N50SG , TMP5N60AZ , 75N75 , TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z , TMP7N65AZ , TMP7N65Z , TMP7N90 , TMP830 .
Keywords - TMP5N60Z MOSFET datasheet
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