All MOSFET. TMP6N65 Datasheet

 

TMP6N65 Datasheet and Replacement


   Type Designator: TMP6N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220
 

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TMP6N65 Datasheet (PDF)

 ..1. Size:577K  trinnotech
 tmp6n65 tmpf6n65.pdf pdf_icon

TMP6N65

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF

 9.1. Size:1021K  trinnotech
 tmp6n70 tmpf6n70.pdf pdf_icon

TMP6N65

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A

 9.2. Size:525K  cn wuxi unigroup
 tma6n90h tmp6n90h.pdf pdf_icon

TMP6N65

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90

Datasheet: TMP4N65Z , TMP4N80 , TMP4N90 , TMP5N50 , TMP5N50SG , TMP5N60AZ , TMP5N60Z , TMP630Z , CS150N03A8 , TMP6N70 , TMP7N60Z , TMP7N65AZ , TMP7N65Z , TMP7N90 , TMP830 , TMP830AZ , TMP830Z .

History: APQ12SN60AH | TMP4N65 | APQ12SN65AH | MPVA4N70F | SM4504NHKP | IRF7450 | AOD452A

Keywords - TMP6N65 MOSFET datasheet

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