TMP6N65 Specs and Replacement
Type Designator: TMP6N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-220
TMP6N65 substitution
- MOSFET ⓘ Cross-Reference Search
TMP6N65 datasheet
tmp6n65 tmpf6n65.pdf
TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF... See More ⇒
tmp6n70 tmpf6n70.pdf
TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A ... See More ⇒
tma6n90h tmp6n90h.pdf
TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90... See More ⇒
Detailed specifications: TMP4N65Z, TMP4N80, TMP4N90, TMP5N50, TMP5N50SG, TMP5N60AZ, TMP5N60Z, TMP630Z, IRF520, TMP6N70, TMP7N60Z, TMP7N65AZ, TMP7N65Z, TMP7N90, TMP830, TMP830AZ, TMP830Z
Keywords - TMP6N65 MOSFET specs
TMP6N65 cross reference
TMP6N65 equivalent finder
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