TMP830Z MOSFET. Datasheet pdf. Equivalent
Type Designator: TMP830Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
TMP830Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMP830Z Datasheet (PDF)
tmp830z tmpf830z.pdf
TMP830Z(G)/TMPF830Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 4.5A
tmp830az tmpf830az.pdf
TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
tmp830 tmpf830.pdf
TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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