TMPF16N60A Datasheet. Specs and Replacement

Type Designator: TMPF16N60A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 262 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: TO-220F

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TMPF16N60A substitution

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TMPF16N60A datasheet

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TMPF16N60A

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A ... See More ⇒

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TMPF16N60A

TMP16N60/TMPF16N60 TMP16N60G/TMPF16N60G VDSS = 660 V @Tjmax Features ID = 16A Low gate charge RDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHS TMP16N60G / TMPF16N60G... See More ⇒

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TMPF16N60A

TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A ... See More ⇒

 9.1. Size:609K  trinnotech
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TMPF16N60A

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N... See More ⇒

Detailed specifications: TMPF11N50SG, TMPF12N60, TMPF12N60A, TMPF13N50, TMPF13N50A, TMPF15N50, TMPF16N25Z, TMPF16N60, IRF740, TMPF18N20Z, TMPF20N50, TMPF20N50A, TMPF2N60AZ, TMPF2N60Z, TMPF2N65AZ, TMPF3N50AZ, TMPF3N50Z

Keywords - TMPF16N60A MOSFET specs

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