TMPF2N60AZ Datasheet and Replacement
Type Designator: TMPF2N60AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 17.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220F
TMPF2N60AZ substitution
TMPF2N60AZ Datasheet (PDF)
tmp2n60az tmpf2n60az.pdf

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
tmp2n60z tmpf2n60z.pdf

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A
tmp2n65az tmpf2n65az.pdf

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
tmp20n50 tmpf20n50.pdf

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: VN0109ND
Keywords - TMPF2N60AZ MOSFET datasheet
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History: VN0109ND



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