TMPF3N50Z Datasheet. Specs and Replacement
Type Designator: TMPF3N50Z 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220F
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TMPF3N50Z substitution
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TMPF3N50Z datasheet
tmp3n50z tmpf3n50z.pdf
TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒
tmp3n50az tmpf3n50az.pdf
TMP3N50AZ(G)/TMPF3N50AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒
tmp3n80 tmpf3n80.pdf
TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N80 / TMPF3N80 TO-220 / TO-220F TMP3N80 / TMPF3N80 RoHS TMP3N80G / TMPF3N... See More ⇒
tmp3n90 tmpf3n90.pdf
TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax Features ID = 2.5A Low gate charge RDS(ON) = 5.1 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N90 / TMPF3N90 TO-220 / TO-220F TMP3N90 / TMPF3N90 RoHS TMP3N90G / TMPF... See More ⇒
Detailed specifications: TMPF16N60A, TMPF18N20Z, TMPF20N50, TMPF20N50A, TMPF2N60AZ, TMPF2N60Z, TMPF2N65AZ, TMPF3N50AZ, IRF640, TMPF3N80, TMPF3N90, TMPF4N60, TMPF4N60AZ, TMPF4N65, TMPF4N65AZ, TMPF4N65Z, TMPF4N80
Keywords - TMPF3N50Z MOSFET specs
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