TMPF5N60Z Datasheet. Specs and Replacement

Type Designator: TMPF5N60Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220F

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TMPF5N60Z substitution

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TMPF5N60Z datasheet

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TMPF5N60Z

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A ... See More ⇒

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TMPF5N60Z

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒

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TMPF5N60Z

TMP5N50SG/TMPF5N50SG VDSS = 550 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen Free Abs... See More ⇒

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TMPF5N60Z

TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHS T... See More ⇒

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Detailed specifications: TMPF4N65, TMPF4N65AZ, TMPF4N65Z, TMPF4N80, TMPF4N90, TMPF5N50, TMPF5N50SG, TMPF5N60AZ, P55NF06, TMPF630Z, TMPF6N65, TMPF6N70, TMPF7N60Z, TMPF7N65AZ, TMPF7N65Z, TMPF7N90, TMPF830

Keywords - TMPF5N60Z MOSFET specs

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