All MOSFET. TMPF630Z Datasheet

 

TMPF630Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMPF630Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F

 TMPF630Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMPF630Z Datasheet (PDF)

 ..1. Size:607K  trinnotech
tmp630z tmpf630z.pdf

TMPF630Z
TMPF630Z

TMP630Z(G)/TMPF630Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A

 9.1. Size:1021K  trinnotech
tmp6n70 tmpf6n70.pdf

TMPF630Z
TMPF630Z

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A

 9.2. Size:577K  trinnotech
tmp6n65 tmpf6n65.pdf

TMPF630Z
TMPF630Z

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF

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