TMPF630Z Datasheet and Replacement
Type Designator: TMPF630Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 17.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220F
TMPF630Z substitution
TMPF630Z Datasheet (PDF)
tmp630z tmpf630z.pdf

TMP630Z(G)/TMPF630Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A
tmp6n70 tmpf6n70.pdf

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A
tmp6n65 tmpf6n65.pdf

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF
Datasheet: TMPF4N65AZ , TMPF4N65Z , TMPF4N80 , TMPF4N90 , TMPF5N50 , TMPF5N50SG , TMPF5N60AZ , TMPF5N60Z , 2SK3878 , TMPF6N65 , TMPF6N70 , TMPF7N60Z , TMPF7N65AZ , TMPF7N65Z , TMPF7N90 , TMPF830 , TMPF830AZ .
History: PJN1NA50 | IRF7751GTR
Keywords - TMPF630Z MOSFET datasheet
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History: PJN1NA50 | IRF7751GTR



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