TMPF9N50 Datasheet. Specs and Replacement

Type Designator: TMPF9N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

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TMPF9N50 substitution

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TMPF9N50 datasheet

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TMPF9N50

TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G VDSS = 550 V @Tjmax Features ID = 9A Low gate charge RDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHS TMP9N50G / TMPF9N50G TO-220 / T... See More ⇒

 0.1. Size:619K  trinnotech
tmp9n50s tmpf9n50s.pdf pdf_icon

TMPF9N50

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A ... See More ⇒

 8.1. Size:403K  trinnotech
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TMPF9N50

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N... See More ⇒

 8.2. Size:609K  trinnotech
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TMPF9N50

TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A ... See More ⇒

Detailed specifications: TMPF7N90, TMPF830, TMPF830AZ, TMPF830Z, TMPF8N25Z, TMPF8N50Z, TMPF8N60AZ, TMPF8N80, IRFP260, TMPF9N50S, TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G, TMT2N60ZG, TMT3N30G, TMT3N40ZG

Keywords - TMPF9N50 MOSFET specs

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