TMPF9N50S Datasheet. Specs and Replacement
Type Designator: TMPF9N50S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
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TMPF9N50S substitution
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TMPF9N50S datasheet
tmp9n50s tmpf9n50s.pdf
TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A ... See More ⇒
tmp9n50 tmpf9n50.pdf
TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G VDSS = 550 V @Tjmax Features ID = 9A Low gate charge RDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHS TMP9N50G / TMPF9N50G TO-220 / T... See More ⇒
tmp9n90 tmpf9n90.pdf
TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N... See More ⇒
tmp9n70 tmpf9n70.pdf
TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A ... See More ⇒
Detailed specifications: TMPF830, TMPF830AZ, TMPF830Z, TMPF8N25Z, TMPF8N50Z, TMPF8N60AZ, TMPF8N80, TMPF9N50, 4435, TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G, TMT2N60ZG, TMT3N30G, TMT3N40ZG, TMU16N25Z
Keywords - TMPF9N50S MOSFET specs
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