TMPF9N50S Datasheet and Replacement
Type Designator: TMPF9N50S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
TMPF9N50S substitution
TMPF9N50S Datasheet (PDF)
tmp9n50s tmpf9n50s.pdf

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A
tmp9n50 tmpf9n50.pdf

TMP9N50/TMPF9N50TMP9N50G/TMPF9N50GVDSS = 550 V @TjmaxFeaturesID = 9A Low gate chargeRDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHSTMP9N50G / TMPF9N50G TO-220 / T
tmp9n90 tmpf9n90.pdf

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N
tmp9n70 tmpf9n70.pdf

TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A
Datasheet: TMPF830 , TMPF830AZ , TMPF830Z , TMPF8N25Z , TMPF8N50Z , TMPF8N60AZ , TMPF8N80 , TMPF9N50 , 2SK3568 , TMPF9N60 , TMPF9N70 , TMPF9N90 , TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z .
History: SSM3K05FU | APT5018BFLLG | FQD20N06TF | P2202CV | BUK6E2R3-40C | UT3401ZG-AE3-R | BSZ100N03LSG
Keywords - TMPF9N50S MOSFET datasheet
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History: SSM3K05FU | APT5018BFLLG | FQD20N06TF | P2202CV | BUK6E2R3-40C | UT3401ZG-AE3-R | BSZ100N03LSG



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