All MOSFET. TMPF9N90 Datasheet

 

TMPF9N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: TMPF9N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 65 nC

Rise Time (tr): 49 nS

Drain-Source Capacitance (Cd): 184 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-220F

TMPF9N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMPF9N90 Datasheet (PDF)

1.1. tmp9n90 tmpf9n90.pdf Size:403K _update

TMPF9N90
TMPF9N90

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A  Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N

4.1. tmp9n50 tmpf9n50.pdf Size:333K _update

TMPF9N90
TMPF9N90

TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G VDSS = 550 V @Tjmax Features ID = 9A  Low gate charge RDS(on) = 0.85 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHS TMP9N50G / TMPF9N50G TO-220 / T

4.2. tmp9n70 tmpf9n70.pdf Size:609K _update

TMPF9N90
TMPF9N90

 TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 700V 9A <1.05W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP9N70 / TMPF9N70 TO-220 / TO-220F TMP9N70 / TMPF9N70 RoHS TMP9N70G / TMPF9N70G TO-220 / TO-220F TMP9N

 4.3. tmp9n60 tmpf9n60.pdf Size:347K _update

TMPF9N90
TMPF9N90

TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G VDSS = 660 V @Tjmax Features ID = 9A  Low gate charge RDS(ON) = 1.0 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP9N60 / TMPF9N60 TO-220 / TO-220F TMP9N60 / TMPF9N60 RoHS TMP9

4.4. tmp9n50s tmpf9n50s.pdf Size:619K _update

TMPF9N90
TMPF9N90

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 8.5A <0.85W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP9N50S / TMPF9N50S TO-220 / TO-220F TMP9N50S / TMPF9N50S RoHS TMP9N50SG / TMPF9N50SG TO-220 / TO-2

Datasheet: TMPF8N25Z , TMPF8N50Z , TMPF8N60AZ , TMPF8N80 , TMPF9N50 , TMPF9N50S , TMPF9N60 , TMPF9N70 , 2SK2996 , TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z , TMU18N20Z , TMU2N40 , TMU2N60AZ .

 
Back to Top