All MOSFET. TMU2N60Z Datasheet

 

TMU2N60Z Datasheet and Replacement


   Type Designator: TMU2N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: I-PAK
 

 TMU2N60Z substitution

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TMU2N60Z Datasheet (PDF)

 ..1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf pdf_icon

TMU2N60Z

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 7.1. Size:455K  trinnotech
 tmd2n60az tmu2n60az.pdf pdf_icon

TMU2N60Z

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 7.2. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMU2N60Z

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info

 8.1. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf pdf_icon

TMU2N60Z

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

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Datasheet: TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z , TMU18N20Z , TMU2N40 , TMU2N60AZ , IRLB4132 , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , TMU3N50Z , TMU3N80G , TMU3N90 , TMU4N60 , TMU4N60AZ .

History: SWB13N65K2 | BL10N80-A

Keywords - TMU2N60Z MOSFET datasheet

 TMU2N60Z cross reference
 TMU2N60Z equivalent finder
 TMU2N60Z lookup
 TMU2N60Z substitution
 TMU2N60Z replacement

 

 
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