All MOSFET. TMU3N40ZG Datasheet

 

TMU3N40ZG Datasheet and Replacement


   Type Designator: TMU3N40ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: I-PAK
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TMU3N40ZG Datasheet (PDF)

 ..1. Size:537K  trinnotech
 tmd3n40zg tmu3n40zg.pdf pdf_icon

TMU3N40ZG

TMD3N40ZG/TMU3N40ZGFeaturesVDSS = 440 V @Tjmax Low gate chargeID = 2A 100% avalanche testedRDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performanceDD-PAKI-PAKGSDevice Package Marking RemarkTMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free

 9.1. Size:334K  trinnotech
 tmd3n80g tmu3n80g.pdf pdf_icon

TMU3N40ZG

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter

 9.2. Size:829K  trinnotech
 tmd3n90 tmu3n90.pdf pdf_icon

TMU3N40ZG

TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

 9.3. Size:454K  trinnotech
 tmd3n50az tmu3n50az.pdf pdf_icon

TMU3N40ZG

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

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History: LSF65R570GT | CSD16342Q5A

Keywords - TMU3N40ZG MOSFET datasheet

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