TMU3N40ZG Datasheet. Specs and Replacement

Type Designator: TMU3N40ZG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: I-PAK

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TMU3N40ZG datasheet

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 tmd3n40zg tmu3n40zg.pdf pdf_icon

TMU3N40ZG

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free ... See More ⇒

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TMU3N40ZG

TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter ... See More ⇒

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TMU3N40ZG

TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A ... See More ⇒

 9.3. Size:454K  trinnotech
 tmd3n50az tmu3n50az.pdf pdf_icon

TMU3N40ZG

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒

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Detailed specifications: TMT3N30G, TMT3N40ZG, TMU16N25Z, TMU18N20Z, TMU2N40, TMU2N60AZ, TMU2N60Z, TMU2N65AZ, AON7506, TMU3N50AZ, TMU3N50Z, TMU3N80G, TMU3N90, TMU4N60, TMU4N60AZ, TMU4N65AZ, TMU4N65Z

Keywords - TMU3N40ZG MOSFET specs

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