TMU4N60AZ Datasheet. Specs and Replacement

Type Designator: TMU4N60AZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: I-PAK

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TMU4N60AZ substitution

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TMU4N60AZ datasheet

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TMU4N60AZ

TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒

 7.1. Size:317K  trinnotech
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TMU4N60AZ

TMD4N60/TMU4N60 TMD4N60G/TMU4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHS TMD4N60G/TMU4N60G D-PAK/I-PAK ... See More ⇒

 7.2. Size:543K  cn wuxi unigroup
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TMU4N60AZ

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf... See More ⇒

 8.1. Size:453K  trinnotech
tmd4n65az tmu4n65az.pdf pdf_icon

TMU4N60AZ

TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒

Detailed specifications: TMU2N60Z, TMU2N65AZ, TMU3N40ZG, TMU3N50AZ, TMU3N50Z, TMU3N80G, TMU3N90, TMU4N60, 4N60, TMU4N65AZ, TMU4N65Z, TMU5N40ZG, TMU5N50, TMU5N50G, TMU5N60AZ, TMU5N60Z, TMU630Z

Keywords - TMU4N60AZ MOSFET specs

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