TMU5N60AZ Specs and Replacement
Type Designator: TMU5N60AZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: I-PAK
TMU5N60AZ substitution
- MOSFET ⓘ Cross-Reference Search
TMU5N60AZ datasheet
tmd5n60az tmu5n60az.pdf
TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒
tmd5n60z tmu5n60z.pdf
TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 4.2A ... See More ⇒
tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf
TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS ... See More ⇒
tmd5n40zg tmu5n40zg.pdf
TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso... See More ⇒
Detailed specifications: TMU3N90, TMU4N60, TMU4N60AZ, TMU4N65AZ, TMU4N65Z, TMU5N40ZG, TMU5N50, TMU5N50G, RFP50N06, TMU5N60Z, TMU630Z, TMU6N65G, TMU7N60Z, TMU7N65AZ, TMU7N65Z, TMU830, TMU830AZ
Keywords - TMU5N60AZ MOSFET specs
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