IRFU6215 Datasheet and Replacement
Type Designator: IRFU6215
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 66(max) nC
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
Package: TO251
IRFU6215 substitution
IRFU6215 Datasheet (PDF)
irfr6215pbf irfu6215pbf.pdf
PD-95080AIRFR6215PbFIRFU6215PbFHEXFET Power MOSFETl P-Channell 175C Operating TemperatureDl Surface Mount (IRFR6215)VDSS = -150Vl Straight Lead (IRFU6215)l Advanced Process TechnologyRDS(on) = 0.295l Fast SwitchingGl Fully Avalanche RatedID = -13Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irfr6215pbf irfu6215pbf.pdf
IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature VDSS -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) 0.295 Advanced Process Technology Fast Switching ID -13A Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advan
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