All MOSFET. IRFU6215 Datasheet

 

IRFU6215 Datasheet and Replacement


   Type Designator: IRFU6215
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
   Package: TO251
 

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IRFU6215 Datasheet (PDF)

 ..1. Size:241K  international rectifier
 irfr6215pbf irfu6215pbf.pdf pdf_icon

IRFU6215

PD-95080AIRFR6215PbFIRFU6215PbFHEXFET Power MOSFETl P-Channell 175C Operating TemperatureDl Surface Mount (IRFR6215)VDSS = -150Vl Straight Lead (IRFU6215)l Advanced Process TechnologyRDS(on) = 0.295l Fast SwitchingGl Fully Avalanche RatedID = -13Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 ..2. Size:648K  infineon
 irfr6215pbf irfu6215pbf.pdf pdf_icon

IRFU6215

IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature VDSS -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) 0.295 Advanced Process Technology Fast Switching ID -13A Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advan

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