IRF1405ZPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1405ZPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 770 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0049 Ohm
Package: TO-220
IRF1405ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1405ZPBF Datasheet (PDF)
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
irf1405z.pdf
PD - 94645AUTOMOTIVE MOSFETIRF1405ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 4.9ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processin
auirf1405zstrl.pdf
PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for
irf1405zl-7ppbf irf1405zs-7ppbf.pdf
PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro
auirf1405zs-7p.pdf
AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela
auirf1405zs-7p.pdf
AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela
auirf1405zs auirf1405zl.pdf
AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed
irf1405z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405ZIIRF1405ZFEATURESStatic drain-source on-resistance:RDS(on) 4.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irf1405zs.pdf
Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
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