IRFU9010 Datasheet and Replacement
Type Designator: IRFU9010
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.1 nC
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO251
IRFU9010 substitution
IRFU9010 Datasheet (PDF)
irfr9010 irfu9010 sihfr9010 sihfu9010.pdf

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
Datasheet: IRFU4105 , IRFU411 , IRFU420 , IRFU420A , IRFU5305 , IRFU5410 , IRFU5505 , IRFU6215 , BS170 , IRFU9012 , IRFU9014 , IRFU9015 , IRFU9020 , IRFU9022 , IRFU9024 , IRFU9024N , IRFU9110 .
Keywords - IRFU9010 MOSFET datasheet
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