All MOSFET. FMV03N60E Datasheet

 

FMV03N60E Datasheet and Replacement


   Type Designator: FMV03N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21.5 nC
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220F
 

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FMV03N60E Datasheet (PDF)

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FMV03N60E

FMV03N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

Datasheet: FMR19N60E , FMR19N60ES , FMR21N50ES , FMR23N50ES , FMR23N60E , FMR23N60ES , FMR28N50E , FMR28N50ES , IRFB4227 , FMV05N50E , FMV05N60E , FMV06N60E , FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , FMV09N90E .

History: TMP5N60AZ

Keywords - FMV03N60E MOSFET datasheet

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