FMV06N60E Specs and Replacement
Type Designator: FMV06N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220F
FMV06N60E substitution
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FMV06N60E datasheet
fmv06n60e.pdf
FMV06N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒
fmv06n90e.pdf
http //www.fujisemi.com FMV06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate t... See More ⇒
Detailed specifications: FMR23N50ES, FMR23N60E, FMR23N60ES, FMR28N50E, FMR28N50ES, FMV03N60E, FMV05N50E, FMV05N60E, 2N7000, FMV06N60ES, FMV06N90E, FMV07N50E, FMV08N50E, FMV09N90E, FMV10N60E, FMV10N80E, FMV11N60E
Keywords - FMV06N60E MOSFET specs
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