FMV10N80E Specs and Replacement

Type Designator: FMV10N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-220F

FMV10N80E substitution

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FMV10N80E datasheet

 ..1. Size:364K  fuji
 fmv10n80e.pdf pdf_icon

FMV10N80E

http //www.fujielectric.com/products/semiconductor/ FMV10N80E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching G... See More ⇒

 8.1. Size:495K  fuji
 fmv10n60e.pdf pdf_icon

FMV10N80E

FMV10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒

Detailed specifications: FMV05N60E, FMV06N60E, FMV06N60ES, FMV06N90E, FMV07N50E, FMV08N50E, FMV09N90E, FMV10N60E, AON7408, FMV11N60E, FMV11N90E, FMV12N50E, FMV12N50ES, FMV12N60ES, FMV13N60E, FMV13N60ES, FMV16N50E

Keywords - FMV10N80E MOSFET specs

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