All MOSFET. FMV10N80E Datasheet

 

FMV10N80E Datasheet and Replacement


   Type Designator: FMV10N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220F
 

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FMV10N80E Datasheet (PDF)

 ..1. Size:364K  fuji
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FMV10N80E

http://www.fujielectric.com/products/semiconductor/FMV10N80E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingG

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FMV10N80E

FMV10N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

Datasheet: FMV05N60E , FMV06N60E , FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , IRLZ44N , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E .

History: STS5DP3LLH6 | P3710AV

Keywords - FMV10N80E MOSFET datasheet

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