FMV11N90E MOSFET. Datasheet pdf. Equivalent
Type Designator: FMV11N90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO-220F
FMV11N90E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMV11N90E Datasheet (PDF)
fmv11n90e.pdf
FMV11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.
fmv11n60e.pdf
FMV11N60E FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-E3 seriesFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00
fmv11n60e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV11N60EFEATURESWith TO-220F packagingMaintains both low power loss andlow noiseVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible po
Datasheet: FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , SPP20N60C3 , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E .
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