FMV11N90E Datasheet and Replacement
Type Designator: FMV11N90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
FMV11N90E substitution
FMV11N90E Datasheet (PDF)
fmv11n90e.pdf

FMV11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.
fmv11n60e.pdf

FMV11N60E FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-E3 seriesFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00
fmv11n60e.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV11N60EFEATURESWith TO-220F packagingMaintains both low power loss andlow noiseVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible po
Datasheet: FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , 12N60 , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - FMV11N90E MOSFET datasheet
FMV11N90E cross reference
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History: SI8410DB | IPB80N06S2L-11 | AP30T10GK



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