All MOSFET. FMV12N50ES Datasheet

 

FMV12N50ES Datasheet and Replacement


   Type Designator: FMV12N50ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220F
 

 FMV12N50ES substitution

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FMV12N50ES Datasheet (PDF)

 ..1. Size:487K  fuji
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FMV12N50ES

FMV12N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F (SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.

 5.1. Size:374K  fuji
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FMV12N50ES

FMV12N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 5.2. Size:201K  inchange semiconductor
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FMV12N50ES

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV12N50EFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE

 8.1. Size:527K  fuji
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FMV12N50ES

FMV12N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

Datasheet: FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , IRF1010E , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E , FMV16N60ES , FMV17N60ES .

History: IRFSL3107PBF | AON6206

Keywords - FMV12N50ES MOSFET datasheet

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