FMV12N50ES MOSFET: N-Ch, 500V, 12A. Full datasheet with pinout, specifications and replacement transistor list

FMV12N50ES Datasheet (PDF)

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FMV12N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F (SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.

5.1. Size:374K fuji
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FMV12N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

5.2. Size:201K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV12N50EFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE

8.1. Size:527K fuji
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FMV12N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

Datasheet: FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , IRF9540N , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E , FMV16N60ES , FMV17N60ES .