All MOSFET. FMV13N60ES Datasheet

 

FMV13N60ES Datasheet and Replacement


   Type Designator: FMV13N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220F
 

 FMV13N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMV13N60ES Datasheet (PDF)

 ..1. Size:529K  fuji
 fmv13n60es.pdf pdf_icon

FMV13N60ES

FMV13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 5.1. Size:466K  fuji
 fmv13n60e.pdf pdf_icon

FMV13N60ES

FMV13N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

Datasheet: FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E , AO3400 , FMV16N50E , FMV16N50ES , FMV16N60E , FMV16N60ES , FMV17N60ES , FMV19N60E , FMV19N60ES , FMV20N50E .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - FMV13N60ES MOSFET datasheet

 FMV13N60ES cross reference
 FMV13N60ES equivalent finder
 FMV13N60ES lookup
 FMV13N60ES substitution
 FMV13N60ES replacement

 

 
Back to Top

 


 
.