All MOSFET. FMV16N50E Datasheet

 

FMV16N50E Datasheet and Replacement


   Type Designator: FMV16N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

FMV16N50E Datasheet (PDF)

 ..1. Size:358K  fuji
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FMV16N50E

FMV16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 0.1. Size:476K  fuji
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FMV16N50E

FMV16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 8.1. Size:519K  fuji
fmv16n60es.pdf pdf_icon

FMV16N50E

FMV16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 8.2. Size:469K  fuji
fmv16n60e.pdf pdf_icon

FMV16N50E

FMV16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CRTD063N04L | WMP08N70EM | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - FMV16N50E MOSFET datasheet

 FMV16N50E cross reference
 FMV16N50E equivalent finder
 FMV16N50E lookup
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