FMV17N60ES PDF Specs and Replacement
Type Designator: FMV17N60ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220F
FMV17N60ES substitution
FMV17N60ES PDF Specs
fmv17n60es.pdf
FMV17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 ... See More ⇒
Detailed specifications: FMV12N50ES , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E , FMV16N60ES , SKD502T , FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G .
Keywords - FMV17N60ES MOSFET specs
FMV17N60ES cross reference
FMV17N60ES equivalent finder
FMV17N60ES pdf lookup
FMV17N60ES substitution
FMV17N60ES replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
