All MOSFET. FMV17N60ES Datasheet

 

FMV17N60ES Datasheet and Replacement


   Type Designator: FMV17N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

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FMV17N60ES Datasheet (PDF)

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FMV17N60ES

FMV17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

Datasheet: FMV12N50ES , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E , FMV16N60ES , SPP20N60C3 , FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G .

History: IPP50N12S3L-15 | FMV21N50ES

Keywords - FMV17N60ES MOSFET datasheet

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