All MOSFET. FMW20N60S1HF Datasheet

 

FMW20N60S1HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMW20N60S1HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 3120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-247

 FMW20N60S1HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMW20N60S1HF Datasheet (PDF)

 ..1. Size:470K  fuji
 fmw20n60s1hf.pdf

FMW20N60S1HF FMW20N60S1HF

http://www.fujielectric.com/products/semiconductor/FMW20N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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