FMW20N60S1HF Specs and Replacement
Type Designator: FMW20N60S1HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 3120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-247
FMW20N60S1HF substitution
- MOSFET ⓘ Cross-Reference Search
FMW20N60S1HF datasheet
fmw20n60s1hf.pdf
http //www.fujielectric.com/products/semiconductor/ FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-247-P2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) ... See More ⇒
Detailed specifications: FMV19N60ES, FMV20N50E, FMV20N50ES, FMV20N60S1, FMV21N50ES, FMV23N50ES, FMV24N25G, FMV30N60S1, CS150N03A8, FMW30N60S1HF, FMW47N60S1HF, FMW79N60S1HF, FP10W50C, FP10W50VX2, FP10W90, FP10W90HVX2, FP11W60C3
Keywords - FMW20N60S1HF MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
