All MOSFET. FQA11N90C Datasheet

 

FQA11N90C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA11N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 215 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO-3P

FQA11N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQA11N90C Datasheet (PDF)

1.1. fqa11n90c.pdf Size:706K _upd-mosfet

FQA11N90C
FQA11N90C

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching

1.2. fqa11n90c f109.pdf Size:823K _fairchild_semi

FQA11N90C
FQA11N90C

September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored to Fast sw

 2.1. fqa11n90.pdf Size:827K _upd-mosfet

FQA11N90C
FQA11N90C

September 2007 ® QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • 11.4A, 900V, RDS(on) = 0.96Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 72 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 30pF) This advanced technology has been especi

2.2. fqa11n90 fqa11n90 f109.pdf Size:829K _fairchild_semi

FQA11N90C
FQA11N90C

September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
Back to Top

 


FQA11N90C
  FQA11N90C
  FQA11N90C
  FQA11N90C
 

social 

LIST

Last Update

MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
Back to Top