All MOSFET. FQA11N90C Datasheet

 

FQA11N90C Datasheet and Replacement


   Type Designator: FQA11N90C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-3P
 

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FQA11N90C Datasheet (PDF)

 ..1. Size:706K  fairchild semi
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FQA11N90C

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

 ..2. Size:823K  fairchild semi
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FQA11N90C

September 2007 QFETFQA11N90C_F109900V N-Channel MOSFETFeatures Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 23pF)This advanced technology has been especially tailored

 ..3. Size:708K  onsemi
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FQA11N90C

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

 6.1. Size:829K  fairchild semi
fqa11n90 fqa11n90 f109.pdf pdf_icon

FQA11N90C

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi

Datasheet: FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , FQA11N90 , CS150N03A8 , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 .

History: ISP80N08S2L | AP2C016LMT | SIHFB9N65A | SUM110N08-07P | TPCA8054-H | AFN3402 | AM4936N

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