IRFU9120 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFU9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 128 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251
IRFU9120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFU9120 Datasheet (PDF)
irfr9120pbf irfu9120pbf.pdf
PD - 95096AIRFR9120PbFIRFU9120PbF Lead-Free1/10/05Document Number: 91280 www.vishay.com1IRFR/U9120PbFDocument Number: 91280 www.vishay.com2IRFR/U9120PbFDocument Number: 91280 www.vishay.com3IRFR/U9120PbFDocument Number: 91280 www.vishay.com4IRFR/U9120PbFDocument Number: 91280 www.vishay.com5IRFR/U9120PbFDocument Number: 91280 www.vishay.com6I
irfu9120pbf.pdf
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* Surface Mount (IRFR9120/SiHFR9120)COMPLIANTQg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0
irfr9120 irfu9120 sihfr9120 sihfu9120.pdf
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* Surface Mount (IRFR9120/SiHFR9120)COMPLIANTQg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0
irfr9120npbf irfu9120npbf.pdf
PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irfr9120npbf irfu9120npbf.pdf
PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irfr9110pbf irfu9110pbf.pdf
PD - 95324AIRFR9110PbFIRFU9110PbF Lead-Free12/14/04Document Number: 91279 www.vishay.com1IRFR/U9110PbFDocument Number: 91279 www.vishay.com2IRFR/U9110PbFDocument Number: 91279 www.vishay.com3IRFR/U9110PbFDocument Number: 91279 www.vishay.com4IRFR/U9110PbFDocument Number: 91279 www.vishay.com5IRFR/U9110PbFDocument Number: 91279 www.vishay.com6
irfr9110 irfu9110 sihfr9110 sihfu9110.pdf
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.2 Repetitive Avalanche RatedQg (Max.) (nC) 8.7 Surface Mount (IRFR9110, SiHFR9110)Qgs (nC) 2.2 Straight Lead (IRFU9110, SiHFU9110) Available in Tape
irfr9110pbf irfu9110pbf sihfr9110 sihfu9110.pdf
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2 Surface Mount (IRFR9110, SiHFR9110)Qg (Max.) (nC) 8.7 Straight Lead (IRFU9110, SiHFU9110)Qgs (nC) 2.2 Available in Tape and ReelQgd (nC) 4.1 P-Channel
irfr9110 irfu9110 sihfr9110 sihfu9110 2.pdf
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* Surface Mount (IRFR9110/SiHFR9110)COMPLIANTQg (Max.) (nC) 8.7 Straight Lead (IRFU9110/SiHFU9110)Qgs (nC) 2.2 Available in Tape and ReelQgd (nC) 4.1
irfu9110pbf.pdf
IRFU9110PBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Co
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918