FQA34N25 Specs and Replacement
Type Designator: FQA34N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 335 nS
Cossⓘ - Output Capacitance: 465 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO-3P
FQA34N25 substitution
- MOSFET ⓘ Cross-Reference Search
FQA34N25 datasheet
fqa34n25.pdf
October 2001 FQA34N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 34A, 250V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s... See More ⇒
fqa34n20l.pdf
June 2000 TM QFET QFET QFET QFET FQA34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 34A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has ... See More ⇒
fqa34n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 34A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been ... See More ⇒
Detailed specifications: FQA24N50F, FQA28N15F109, FQA28N50F109, FQA28N50F, FQA33N10, FQA33N10L, FQA34N20, FQA34N20L, MMIS60R580P, FQA35N40, FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, FQA48N20, FQA55N10
Keywords - FQA34N25 MOSFET specs
FQA34N25 cross reference
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