FQA44N10 Datasheet and Replacement. Cross Reference Search

FQA44N10 Datasheet (PDF)

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December 2000TMQFETQFETQFETQFETFQA44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is espe

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April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 120 nC)planar stripe, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has be

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August 2000TMQFETQFETQFETQFETFQA44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , 5N50 , FQA46N15F109 , FQA47P06 , FQA48N20 , FQA55N10 , FQA5N90 , FQA65N06 , FQA6N70 , FQA6N80 .