FQA6N70 Specs and Replacement

Type Designator: FQA6N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 152 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-3P

FQA6N70 substitution

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FQA6N70 datasheet

 ..1. Size:564K  fairchild semi
 fqa6n70.pdf pdf_icon

FQA6N70

December 2000 TM QFET QFET QFET QFET FQA6N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology is espe... See More ⇒

 9.1. Size:726K  fairchild semi
 fqa6n90.pdf pdf_icon

FQA6N70

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒

 9.2. Size:797K  fairchild semi
 fqa6n90c f109.pdf pdf_icon

FQA6N70

September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored t... See More ⇒

 9.3. Size:677K  fairchild semi
 fqa6n80.pdf pdf_icon

FQA6N70

September 2000 TM QFET FQA6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo... See More ⇒

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Detailed specifications: FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, FQA48N20, FQA55N10, FQA5N90, FQA65N06, 20N60, FQA6N80, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06

Keywords - FQA6N70 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.