FQA7N80 Specs and Replacement

Type Designator: FQA7N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-3P

FQA7N80 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQA7N80 datasheet

 ..1. Size:732K  fairchild semi
 fqa7n80.pdf pdf_icon

FQA7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been es... See More ⇒

 0.1. Size:609K  fairchild semi
 fqa7n80c.pdf pdf_icon

FQA7N80

TM QFET FQA7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast... See More ⇒

 0.2. Size:798K  fairchild semi
 fqa7n80c f109.pdf pdf_icon

FQA7N80

September 2007 QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 10pF) This advanced technology has been especially tailored ... See More ⇒

 0.3. Size:1580K  onsemi
 fqa7n80c-f109.pdf pdf_icon

FQA7N80

FQA7N80C-F109 N-Channel QFET MOSFET Description 800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC) technology has been especially tailored to reduce o... See More ⇒

SHOW MORE

Detailed specifications: FQA48N20, FQA55N10, FQA5N90, FQA65N06, FQA6N70, FQA6N80, FQA6N90, FQA7N60, IRFP460, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, FQA8N90C, FQA90N10V2, FQA9N50, FQA9N90C

Keywords - FQA7N80 MOSFET specs

 FQA7N80 cross reference

 FQA7N80 equivalent finder

 FQA7N80 pdf lookup

 FQA7N80 substitution

 FQA7N80 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.