FQAF65N06 Specs and Replacement
Type Designator: FQAF65N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-3PF
FQAF65N06 substitution
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FQAF65N06 datasheet
fqaf65n06.pdf
May 2001 TM QFET FQAF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 49A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored t... See More ⇒
fqaf6n80.pdf
September 2000 TM QFET FQAF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.4A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail... See More ⇒
fqaf6n90.pdf
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒
Detailed specifications: FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, FQAF44N10, FQAF47P06, FQAF58N08, FQAF5N90, K4145, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80, FQAF7N90, FQAF8N80, FQAF90N08, FQAF9N50
Keywords - FQAF65N06 MOSFET specs
FQAF65N06 cross reference
FQAF65N06 equivalent finder
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