All MOSFET. FQAF65N06 Datasheet

 

FQAF65N06 Datasheet and Replacement


   Type Designator: FQAF65N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 48 nC
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-3PF
 

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FQAF65N06 Datasheet (PDF)

 ..1. Size:652K  fairchild semi
 fqaf65n06.pdf pdf_icon

FQAF65N06

May 2001TMQFETFQAF65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 49A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored t

 9.1. Size:659K  fairchild semi
 fqaf6n80.pdf pdf_icon

FQAF65N06

September 2000TMQFETFQAF6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tail

 9.2. Size:723K  fairchild semi
 fqaf6n90.pdf pdf_icon

FQAF65N06

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

Datasheet: FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 , IRFB3607 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , FQAF9N50 .

History: NCEP02590T

Keywords - FQAF65N06 MOSFET datasheet

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