FQAF90N08 Datasheet and Replacement
Type Designator: FQAF90N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 360 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-3PF
FQAF90N08 substitution
FQAF90N08 Datasheet (PDF)
fqaf90n08.pdf

January 2001TMQFETQFETQFETQFETFQAF90N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 56A, 80V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 200 pF)This advanced technology has been
fqaf9p25.pdf

December 2000TMQFETQFETQFETQFETFQAF9P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, RDS(on) = 0.62 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology is e
fqaf9n50.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been
Datasheet: FQAF5N90 , FQAF65N06 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 , IRLZ44N , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , FQB11P06TM .
History: HSU4006 | AMS4210 | IRFS9621 | SQM85N03-06P | VN35AB | AP2316GN-HF | IRFHM4234
Keywords - FQAF90N08 MOSFET datasheet
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History: HSU4006 | AMS4210 | IRFS9621 | SQM85N03-06P | VN35AB | AP2316GN-HF | IRFHM4234



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