FQB11P06TM Datasheet and Replacement
Type Designator: FQB11P06TM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 195 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: D2-PAK
FQB11P06TM substitution
FQB11P06TM Datasheet (PDF)
fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf

October 2008QFETFQB11P06 / FQI11P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been espec
fqb11p06.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqb11n40ctm.pdf

October 2008QFETFQB11N40C/FQI11N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especia
fqb11n40c.pdf

November 2013FQB11N40CN-Channel QFET MOSFET400 V, 10.5 A, 530 m Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 5.25 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tai
Datasheet: FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , P60NF06 , FQB12N50TMAM002 , FQB12N60CTM , FQB12N60TMAM002 , FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM .
History: STP11NB40 | AM1590CE | 5N65KG-TM3-T | SHD226405 | BUK9Y41-80E
Keywords - FQB11P06TM MOSFET datasheet
FQB11P06TM cross reference
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History: STP11NB40 | AM1590CE | 5N65KG-TM3-T | SHD226405 | BUK9Y41-80E



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