FQB11P06TM
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB11P06TM
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 53
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11.4
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 195
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175
Ohm
Package:
D2-PAK
FQB11P06TM
Datasheet (PDF)
..1. Size:971K fairchild semi
fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf 
October 2008QFETFQB11P06 / FQI11P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been espec
6.1. Size:1032K onsemi
fqb11p06.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:970K fairchild semi
fqb11n40ctm.pdf
October 2008QFETFQB11N40C/FQI11N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especia
9.2. Size:972K fairchild semi
fqb11n40c.pdf
November 2013FQB11N40CN-Channel QFET MOSFET400 V, 10.5 A, 530 m Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 5.25 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tai
9.3. Size:565K fairchild semi
fqb11n40tm fqi11n40tu.pdf
November 2001FQB11N40 / FQI11N40400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tai
9.4. Size:1039K onsemi
fqb11n40c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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