FQB1P50TM Specs and Replacement

Type Designator: FQB1P50TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm

Package: D2-PAK

FQB1P50TM substitution

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FQB1P50TM datasheet

 ..1. Size:934K  fairchild semi
 fqb1p50tm fqb1p50 fqi1p50 fqi1p50tu.pdf pdf_icon

FQB1P50TM

October 2008 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially t... See More ⇒

 7.1. Size:927K  onsemi
 fqb1p50.pdf pdf_icon

FQB1P50TM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQB17P06TM, FQB17P10TM, FQB19N10LTM, FQB19N10TM, FQB19N20CTM, FQB19N20LTM, FQB19N20TM, FQB1N60TM, IRFZ46N, FQB20N06LTM, FQB20N06TM, FQB22P10TM, FQB24N08TM, FQB25N33TM, FQB27N25TMAM002, FQB27P06TM, FQB2N30TM

Keywords - FQB1P50TM MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.