All MOSFET. FQB2N60TM Datasheet

 

FQB2N60TM Datasheet and Replacement


   Type Designator: FQB2N60TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: D2-PAK
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FQB2N60TM Datasheet (PDF)

 ..1. Size:579K  fairchild semi
 fqb2n60tm.pdf pdf_icon

FQB2N60TM

April 2000TMQFETQFETQFETQFETFQB2N60 / FQI2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 9.1. Size:720K  fairchild semi
 fqb2n50tm.pdf pdf_icon

FQB2N60TM

April 2000TMQFETQFETQFETQFETFQB2N50 / FQI2N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technolog

 9.2. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQB2N60TM

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

 9.3. Size:705K  fairchild semi
 fqb2na90tm fqi2na90tu.pdf pdf_icon

FQB2N60TM

September 2000TMQFETQFETQFETQFETFQB2NA90 / FQI2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced tech

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History: IRFI7536G | WMM11N80M3 | FDMS9620S

Keywords - FQB2N60TM MOSFET datasheet

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 FQB2N60TM equivalent finder
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