All MOSFET. FQB2NA90TM Datasheet

 

FQB2NA90TM Datasheet and Replacement


   Type Designator: FQB2NA90TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm
   Package: D2-PAK
 

 FQB2NA90TM substitution

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FQB2NA90TM Datasheet (PDF)

 ..1. Size:705K  fairchild semi
 fqb2na90tm fqi2na90tu.pdf pdf_icon

FQB2NA90TM

September 2000TMQFETQFETQFETQFETFQB2NA90 / FQI2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced tech

 9.1. Size:579K  fairchild semi
 fqb2n60tm.pdf pdf_icon

FQB2NA90TM

April 2000TMQFETQFETQFETQFETFQB2N60 / FQI2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 9.2. Size:720K  fairchild semi
 fqb2n50tm.pdf pdf_icon

FQB2NA90TM

April 2000TMQFETQFETQFETQFETFQB2N50 / FQI2N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technolog

 9.3. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQB2NA90TM

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

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Datasheet: FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , FQB2N80TM , FQB2N90TM , 5N50 , FQB2P25TM , FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , FQB33N10TM .

History: HGB170N10AL | SM2318NSA | AFN2312 | CEF08N8 | ELM33416CA | AO3413 | CEU4060AL

Keywords - FQB2NA90TM MOSFET datasheet

 FQB2NA90TM cross reference
 FQB2NA90TM equivalent finder
 FQB2NA90TM lookup
 FQB2NA90TM substitution
 FQB2NA90TM replacement

 

 
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