FQB30N06LTM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB30N06LTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: D2-PAK
FQB30N06LTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB30N06LTM Datasheet (PDF)
fqb30n06ltm.pdf
October 2008QFETFQB30N06L / FQI30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es
fqb30n06l fqi30n06l.pdf
October 2008QFETFQB30N06L / FQI30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es
fqb30n06l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqb30n06tm.pdf
May 2001TMQFETFQB30N06 / FQI30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially ta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
