FQB30N06LTM Specs and Replacement

Type Designator: FQB30N06LTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: D2-PAK

FQB30N06LTM substitution

- MOSFET ⓘ Cross-Reference Search

 

FQB30N06LTM datasheet

 ..1. Size:1034K  fairchild semi
 fqb30n06ltm.pdf pdf_icon

FQB30N06LTM

October 2008 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es... See More ⇒

 5.1. Size:1628K  fairchild semi
 fqb30n06l fqi30n06l.pdf pdf_icon

FQB30N06LTM

October 2008 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es... See More ⇒

 5.2. Size:1221K  onsemi
 fqb30n06l.pdf pdf_icon

FQB30N06LTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:661K  fairchild semi
 fqb30n06tm.pdf pdf_icon

FQB30N06LTM

May 2001 TM QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially ta... See More ⇒

SHOW MORE

Detailed specifications: FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM, FQB2P25TM, FQB2P40TM, IRFZ44N, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM, FQB33N10LTM, FQB33N10TM, FQB34N20LTM, FQB34N20TMAM002, FQB34P10TM

Keywords - FQB30N06LTM MOSFET specs

 FQB30N06LTM cross reference

 FQB30N06LTM equivalent finder

 FQB30N06LTM pdf lookup

 FQB30N06LTM substitution

 FQB30N06LTM replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.