FQB33N10LTM Datasheet and Replacement
Type Designator: FQB33N10LTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 127 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 470 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: D2-PAK
FQB33N10LTM substitution
FQB33N10LTM Datasheet (PDF)
fqb33n10ltm.pdf

October 2008QFETFQB33N10L / FQI33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been
fqb33n10l fqi33n10l.pdf

October 2008QFETFQB33N10L / FQI33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been
fqb33n10tm fqb33n10 fqi33n10.pdf

October 2008QFETFQB33N10 / FQI33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been especial
fqb33n10.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FQB2N90TM , FQB2NA90TM , FQB2P25TM , FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , 20N60 , FQB33N10TM , FQB34N20LTM , FQB34N20TMAM002 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM .
History: SL3409 | WFW20N60W | VBM1101N | AOI2606 | F5018-S | AOB296L | IRH7250
Keywords - FQB33N10LTM MOSFET datasheet
FQB33N10LTM cross reference
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History: SL3409 | WFW20N60W | VBM1101N | AOI2606 | F5018-S | AOB296L | IRH7250



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