FQB34P10TM Specs and Replacement
Type Designator: FQB34P10TM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 33.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 730 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: D2-PAK
FQB34P10TM substitution
- MOSFET ⓘ Cross-Reference Search
FQB34P10TM datasheet
fqb34p10tm fqi34p10tu.pdf
QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tail... See More ⇒
fqb34p10tm f085.pdf
March 2009 TM QFET FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especi... See More ⇒
fqb34p10 fqi34p10.pdf
QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tail... See More ⇒
fqb34p10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQB30N06LTM, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM, FQB33N10LTM, FQB33N10TM, FQB34N20LTM, FQB34N20TMAM002, IRFP460, FQB3N25TM, FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM, FQB3P20TM, FQB3P50TM, FQB46N15TMAM002
Keywords - FQB34P10TM MOSFET specs
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FQB34P10TM replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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